2 edition of Determination of deep impurities in silicon and germanium by infrared photoconductivity found in the catalog.
Determination of deep impurities in silicon and germanium by infrared photoconductivity
W. Robert Thurber
1971 by U.S. National Bureau of Standards, For sale by the Supt. of Docs., U.S. Govt. Print. Off. in Washington .
Written in English
Bibliography: p. 11-12
|Statement||W. Robert Thurber|
|Series||NBS technical note -- 570, NBS technical note -- no. 570|
|The Physical Object|
|Pagination||12 p. ;|
|Number of Pages||12|
Experimental method and instrumentation Introduction The details of experimental technique used for the investigations presented in this work are described in this chapter. Experimental setups for a.c and d.c photoconductivity measurements, setup for electrical switching measurements, details of photoconductivityFile Size: KB. Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies Tunnel ionization of deep impurities by far-infrared radiation, Semiconductors Sci. and Rapid submillimeter photoconductivity and energy relaxation of a two-dimensional electron gas near the surface of silicon, in the book Best of. Graphene (/ˈɡræfiːn/) is an allotrope of carbon in the form of a single layer of atoms in a two-dimensional hexagonal lattice in which one atom forms each is the basic structural element of other allotropes, including graphite, charcoal, carbon nanotubes and can also be considered as an indefinitely large aromatic molecule, the ultimate case of the family . Porous silicon has been the focus of much research activity in recent years, in view of its luminescence, which may enable light emitting devices to be integrated with silicon chips. This work comprises over 50 commissioned essays on the .
The light source used for the photoconductivity measurements was a W tungsten lamp. Light intensity was measured by a digital Luxmeter (TES ). The photocurrent (Iph) was obtained after subtracting the dark current (Id) from the current measured in the presence of light. For the measurement of transient photoconductivity, the light.
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Determination of deep impurities in silicon and germanium by infrared photoconductivity. [W Robert Thurber] Home. WorldCat Home About WorldCat Help.
Search. Search for Library Items Search for Lists Search for Contacts # Germanium. This chapter is concerned with infrared (IR) detectors that are produced by the addition of certain impurity atoms to crystals of germanium (Ge) or silicon (Si). The properties of these detectors result more from the characteristics of the impurity atoms rather than from the host by: The properties of both the hydrogen-like impurities and many of the deep-level impurities in germanium have been treated in several review papers within the last few years.6~17,~ will give a short summary We of the intrinsic properties of germanium and the characteristics of the deep-level impurities relevant t o the discussion of Cited by: 51 Infrared spectroscopy of impurities in silicon Matthew D.
McCluskey1* 1Department of Physics and Astronomy, Washington State University, Pullman, WAUSA *e-mail: [email protected] Abstract Infrared (IR) spectroscopy has yielded fundamental information about the vibrational and electronic properties ofFile Size: 80KB.
The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and CdZnTe have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo.
Deep Level Impurities in Semiconductors Article in Annual Review of Materials Research 7(1) November with Reads How we measure 'reads'. We report the comprehensive results obtained in our group and last few years for the shallow impurities in ultrapure silicon by use of photothermal ionization spectroscopy.
The new results reported here include the discovery and investigation of new shallow impurity centers in Si, the detection for the compensation of different types of impurities, the accurate determination Cited by: 5. Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay1 This standard is issued under the ﬁxed designation F 28; the number immediately following the designation indicates the year of original adoption or, in the case of revision, the year of last revision.
Instrumental neutron activation analysis has been applied to semiconductor grade silicon to study the concentration levels of impurity elements, the contamination during the single crystal growing process, and the vertical and radial distributions of impurities, along with the decontamination effect in the analysis.
Twenty elements of Au, Br, As, W, Cr, Co, Na, Eu, La, Cited by: 4. Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact Cor Claeys, Eddy Simoen.
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or.
In this paper, we show that the combination of different characterization techniques based on the photoconductivity of hydrogenated amorphous silicon can be a tool to investigate on the density of states and transport parameters of this material.
We insist mainly on two techniques in which one records a photocurrent resulting from the movement of an interference grating Cited by: 6. Abstract. Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already.
We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy. Through use of a Fourier transform infrared spectrometer, a photoconductivity signal peaked at 17 mm is observed from a n–i–n detector structure with doped InAs quantum dots in the intrinsic region.
Electronic Transitions of a Sulfur-Pair Related Defect in Silicon. Deep Pseudo-Donors in Silicon. Enhanced Diffusion of Oxygen Impurities in Silicon due to the Catalytic Interaction with Atomic Hydrogen. An Efficient Kinetic Concept for Aggregation Phenomena and Its Application to Oxygen Precipitation in Cz-Silicon.
This article provides a method to determinate boron (B) impurity in silicon by inductively coupled plasma emission spectrometry (ICP-AES), in which the element spectral and analytical parameters were optimized. Three factors that influence testing results were discussed, including the amount of mannitol (C6H14O6) addition, concentration of nitric acid (HNO3) and Author: Yao Liu, Yi Tan, Lei Zhang, Xin Ye Liu, Ya Qiong Li, Jia Yan Li.
probe deep impurities in semiconductors. The standard method for the investigation of deep centers, in particular, the determination of the ionization energy, is deep level tran-sient spectroscopy ~DLTS!1 which is applied in various modiﬁcations.
The application of strong electric ﬁelds to semiconduc. F Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay FR02 Specification for Dumet Wire for Glass-to-Metal Seal Applications FR02 Specification for Iron-Nickel Sealing Alloys F Specification for 42 \% Nickel-6 \% Chromium-Iron Sealing Alloy.
ASTM-F28 - Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay (Withdrawn ) ASTM-F - Standard Test Method for Determination of Lead in Paint Layers and Similar Coatings or in Substrates and Homogenous Materials by Energy Dispersive X-Ray Fluorescence Spectrometry.
Tunnel Ionization of Deep Impurities in the Electric Field of Far-Infrared Radiation. Nonlinear Transfonnation from Ultrasound to Light in Semiconductors. Physics with Isotopically Controlled Semiconductors (Invited) Wide Band Gap Si by Bending Bonds in Four-Coordinated Clathrate Structures.
VII. DEFECTS AND IMPURITIES. Hydrogen in Silicon. The effects of irradiation on the infrared absorption and photoconductivity in silicon are reported.
The absorption near the intrinsic edge is increased and drops off more gradually toward longer wavelengths. Several absorption bands are introduced by neutron irradiation with peak absorptions at, and μ, respectively.
The observation of each band Cited by: Fig. Dependence of dark conductivity (curve 1) and photoconductivity (curve 2) of Se 95 As 5 on concentration of EuF 3 impurity: 1- in the dark, 2-under illumination From the data on the photoconductivity, some parameters of the charged defects model were calculated, in particular, the value of the effective correlation energy U ef.
The paper investigates a model of the photoconductivity of macroporous silicon in the conditions of homogeneous generation of photocarriers.
By the finite element method, the stationary photoconductivity and the time evolution of photoconductivity after instantaneous shutdown of light are calculated. Dependences of the stationary photoconductivity and relaxation time of Cited by: 2. Real-time measurement of laser induced photoconductivity in sol-gel derived Al doped ZnO thin films F.
Eskandari, M. Ranjbar*, P. Kameli and H. Salamati Department of physics, Isfahan University of Technology, Isfahan,Iran Abstract In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at.
% Al concentration were. The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record scientists from 40 countries participated in the Conference which was held in San Francisco August 61 0, The Conference was organized by the ICPS Committee and.
Keywords-CdTe, photoconductivity, deep levels I. INTRODUCTION CdTe and (CdZn)Te has proven to be an effective room temperature X-ray and gamma ray detector with a number of applications in nuclear safety, medical imaging, transportation security etc.
. The transport of generated photocarriers is substantially influenced by presence of deep. Analysis of Single Crystal Silicon for III-V Impurities DIN Standards4 — Measurement of the Electrical Resistivity of Silicon or Germanium Single Crystals by Means of the Four-Point-Probe Direct Current Method with Collinear Probe Array — Determination of the Conductivity Type of Silicon or Germanium by Means of.
The spectral dependence of the infrared absorption cross section of As in Si near 0 K has been determined from infrared transmission measurements for three As concentrations (,and × cm−3) in the impurity band regime.
The results demonstrate some features of physical interest. With increasing As concentration, the lines associated with the intra-atomic. This banner text can have markup. web; books; video; audio; software; images; Toggle navigation.
Photocurrent can also be induced by photon absorption on impurities and defects [5,6,7], which promotes electrons to the conduction band. In general, the diamond’s photoelectric properties, such as optical absorption spectra [8,9] and photon-to-electron quantum efficiency, depend strongly on the doping impurities [10,11].
infrared signal radiation voltage wavelength values photoconductivity junction measurements donor multiplication background gain obtained states results absorption value excited You can write a book review and share your experiences.
Other readers. On the possible correlation between dark conductivity, photoconductivity, and photorefractivity in dye-doped nematic liquid crystals Prapong Klysubuna) and Guy Indebetouwb) Department of Physics, Virginia Tech, Blacksburg Virginia Development of Instrumentation for the Analysis of Photoconductivity in Functional Materials Brandon L.
Chapman, Advisor: Dr. Janice Musfeldt Abstract Photoconductivity as a process is useful in probing the behavior of charge carriers in materials, analyzing behavior in band gap regions with high absorbance values, and in analysis of materialsAuthor: Chapman, Brandon L.
Modelling of Superalinearity and Thermal Quenching of Photoconductivity in Amorphous Silicon p Diffusion in Metallic Glasses under Non-Equilibrium ConditionsCited by: 4.
This is referred to as extrinsic semiconduction. The conductivity depends on the dopants. After the acceptor energy levels have been saturated, there is a range of temperatures before intrinsic semi-conduction kicks in where the conductivity remains essentially that, as temperature increases, there will be a promotion of electrons from the valance band into the.
We use a combination of a scattering-type near-field infrared microscope with a free-electron laser as an intense, tunable radiation source to spatially and spectrally resolve buried doped layers in silicon. To this end, boron implanted stripes in silicon are raster scanned at different wavelengths in the range from 10 to 14 µm.
An analysis based on a simple Drude model for the dielectric. Trace elements in the si furnace. part I: behavior of impurities in quartz during reduction Abstract Quartz and carbonaceous materials, which are used in the production of silicon as well as electrodes and refractories in the silicon furnace, contain trace elements mostly in the form of oxides.
These oxides can be. Simple method for determination of Pb in natural water by flame atomic absorption spectrometry (FAAS) has calibration graph for lead was linear in the range ( ) µg ml-1and the detection limit was x µgL For the determination of microamounts of lead in natural water, an extraction technique was developed.
In silicon wafer processing, it is important to decrease the impurity on the wafer after final process. The authors report a method of analysis of impurity only on the top surface of Si wafers.
In this study, wafer are contaminated with a cleaning solution containing impurity, and the impurity remains on the wafer is collected into the Cited by: 8. In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors.
It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices.
photoconductivity than in the case of subgap excitation. MODEL Current transport in polycrystalline silicon thin films can be described by a thermionic emission model. In this approach the existence of uniform sized grains and in the case of p-doped material a shallow simply ionized acceptor with concentration N A is assumed.
photoconductivity.6 Further analysis of other PBI-derived structures in the literature indicates that a similar loss of visible light activity may also be occurring in other related amino acid appended PBI photoconductive and photocatalytic samples.2,5 If visible light .Dependence on Light Intensity and Wavelength of Microwave Photoconductivity in Silver Bromide Emulsion Microcrystals Akira Hasegawa, Kiyoaki Tsuchiya, Yusuke Yamaoka, and Kenichi Kuge Chiba University Chiba, Japan Abstract The microwave photoconductivity signals of silver bromide emulsion microcrystals (cubic, edge length: μm) were.CHEMICALLY SPECIFIC DYNAMIC CHARACTERIZATION OF PHOTOVOLTAIC AND PHOTOCONDUCTIVITY EFFECTS OF NANOSTRUCTURES BY X-RAY PHOTOELECTRON SPECTROSCOPY Okan Öner EKİZ M.S.
in Graduate Program of Materials Science and Nanotechnology Supervisor: Prof. Dr. Salim ÇIRACI July, X-Ray Photoelectron .